Paper
Optimization of Forward Voltage Drop for Si, SiC, and GaN High Voltage Diode
- Authors:
- Tanya K. Gachovska; Jerry L. Hudgins
- Abstract
- A power electronic device for a converter must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region (n- base). Therefore, the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance (conduction characteristics). This work presents an improved method for calculation of the minimum depletion layer width for a given breakdown voltage of Si, SiC, and GaN structures and further investigates the optimum width of their depletion layers for different blocking voltages to achieve a minimal forward drop. The results show that an optimization of the forward voltage drop by using the optimal doping concentration for corresponding breakdown voltages is necessary for the proper design of a Si diode but is not necessary for wide band gap material devices.
- Keywords
- Forward Voltage Drop; Si; SiC; GaN
- StartPage
- 163
- EndPage
- 174
- Doi