Paper
Network Model Analysis of Poly-silicon Film Deposition on Wafers in CVD Reactor
- Authors:
- Shigeki Hirasawa; Tomoji Watanabe
- Abstract
- We studied a simple reaction analysis technique using a network model (NM) to calculate the concentration distribution and deposition rate in a vertical hot-wall-type low-pressure chemical vapor deposition (LPCVD) reactor. We analyzed the deposition rates of poly-silicon film. The calculation results of the deposition rate using the NM analysis agreed with those of the FEM analysis within the difference of 10%. The computation of the NM analysis was 1000 times faster than that of the FEM analysis, indicating that the NM analysis model is effective for shortening computation time without increasing computation error.
- Keywords
- Chemical Vapor Deposition; Thin Film; Numerical Simulation; Network Model
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