Paper
Combining Short and Long Scale Effects in Modeling of Chemical-Mechanical Planarization
- Authors:
- Sascha Bott; Boris Boris Vasilev; Roland Rzehak; Johann W. Bartha
- Abstract
- In chemical-mechanical planarization (CMP) chip-scale modeling is used to predict the structure height evolutions for a chip layout in combination with a certain process. Usually a test-chip is used for model calibration. The model can then be used for process optimization and control, as well as chip design support. Motivated by a demand for higher accuracy an advanced model for the simulation of the planarization behavior is proposed. It focuses on the mechanical part of CMP. Thus, roughness effects for a more accurate description of pad-wafer-contact on a short scale, which leads to an improved description of local step removal, is included. Furthermore the long scale planarization behavior depending on pattern differences in a chip and the polishing pad used, which leads to a better global step prediction, is considered. The model can be used as a foundation for future investigations on hemical influences.
- Keywords
- CMP; Chip-scale Modeling; Simulation; Interaction; Pad Roughness; Pattern Influence
- StartPage
- 18
- EndPage
- 29
- Doi