Paper

A 2.6 GHz Low-noise Amplifier with Improved Noise Figure by 1.4 dB


Authors:
Jian-Ming Wu; Ching-Jui Chuang; Chia-Wei Lo
Abstract
In this paper, a 2.6 GHz low-noise amplifier (LNA) is designed and implemented using the GaAs high electron mobility transistor (HEMT) for WiMAX applications. The 2.6 GHz LNA is based on a common-source configuration. The noise figure (NF) expression of the 2.6 GHz LNA is derived to improve its noise performance. The noise figure of the LNA can be reduced by 1.4 dB by increasing the biasing resistance at gate of a transistor by a factor of ten and decreasing the real part of equivalent impedance looking into the drain of a transistor by 20 %.
Keywords
Low-noise Amplifier (LNA); Noise Figure (NF)
StartPage
30
EndPage
33
Doi
Download | Back to Issue| Archive