Paper
Simulation and Modeling of Self-Heating Effects in Heterojunction Bipolar Transistors
- Authors:
- Chhandak Mukherjee; C. K. Maiti
- Abstract
- In this work, we investigate the self-heating effects on n-p-n Si heterojunction bipolar transistors (HBTs) with SiGe base and AlGaAs/GaAs HBTs with graded GaAs base via Technology CAD (TCAD) simulation study. Using fully coupled energy balance coupled with thermionic emission transport, two-dimensional numerical process and device simulations have been performed. It is observed that both the self-heating and local temperature increase due to higher internal device power dissipation. Dependence of direct current (DC), alternating current (AC) and self-heating effects on alloy composition of SiGe in the base region are investigated. It is shown that the self heating in SiGe HBTs is high (compared to identical Si BJTs) and significant electrical performance degradation takes place in SiGe HBTs.
- Keywords
- HBT; SiGe; GaAs; AlGaAs; TCAD; Self-Heating; Energy Balance; Device Simulation; Process Simulation
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