Paper
High-Field Electron Drift Velocity in InGaAs Quantum Wells
- Authors:
- K. Po?ela; J. Po?ela; V. Jucien?
- Abstract
- The electric field dependences of electron mobility and drift velocity in InGaAs quantum wells (QWs) of modulation doped Al<sub>x</sub>In<sub>1–x</sub>As/In<sub>y</sub>Ga<sub>1-y</sub>As and Al<sub>x</sub>Ga<sub>1–x</sub>As/In<sub>y</sub>Ga<sub>1-y</sub>As heterostructures are reviewed. It was theoretically predicted and experimentally observed that the enhancement of the low-field mobility in the AlxIn1–xAs/InyGa1-yAs QW up to 1.2×10<sup>4</sup> cm<sup>2</sup>/(V s) can be achieved by increasing the In fraction y in the QW and barriers up to y = 0.7–0.8 and by decreasing Al fraction x up to x = 0.2 in the barrier layer. The largest increase by a factor of 1.8 in the electron mobility and maximal drift velocity up to (2–4)×10<sup>7</sup> cm/s was achieved by inserting the InAs phonon wall into the InGaAs QW. The InAs phonon wall is a new type of a specific barrier transparent to electrons and reflected phonons. The created heterojunctions with high electron mobility and drift velocity were proposed and tested as basic elements for high-speed electronic devices in the 0.5–1.0 THz frequency range.
- Keywords
- Heterostructures; AlInAs/InGaAs; AlGaAs/InGaAs; Microwave and THz Electronics; High-Field Electron Drift Velocity in QWs; Electron–Phonon Scattering in QWs
- StartPage
- 110
- EndPage
- 118
- Doi