Paper

Mg(Fe0.8Ga0.2)2O4- Thin Films as Perspective Material for Spintronics


Authors:
A.V. Trukhanov; A.N. Vasiliev; S.V. Trukhanov
Abstract
Thin films Mg(Fe0.8Ga0.2)2O4-δ were obtained on Si substrates by ion-beam sputtering of Mg(Fe0.8Ga0.2)2O4+δ ceramic target. The thickness of the films was 200 and 400 nm. Optimal conditions for the transfer of the target material were determined. It was found that the composition of the films was close to the target composition. Optimal conditions for film crystallization in phase with spinel structure were determined. The crystal structure and magnetic properties of the films with different thicknesses (200 and 400 nm) were investigated. The films annealed at 900°C are characterized by maximum values of specific magnetization. Magnetotransport properties of the films with thicknesses 200 nm were investigated. Found that the negative coefficient of magnetoresistance increases from 1.33% (at 220 K) till 5.53% (at 180 K) with decreasing temperature.
Keywords
Thin Films; Ferrite Spinel Oxide; Ion-Beam Sputtering; Magnetic and Magnetotransport Properties
StartPage
86
EndPage
94
Doi
10.5963/JBAP0202007
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